Jonas Lähnemann
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Jonas Lähnemann
Post doctoral research assistant
Semiconductor spectroscopy
Paul Drude Institute for Solid State Electronics
Berlin, Germany


On these pages you can find:

Information on my academic background

Pictures, mainly from trips and time abroad

Reports from my time studying in Kenya

Impressions from the time of my volunteer service in Israel

Information concerning my Flevo recumbent bicycle





Useful resources

A listing of my favourite open-source software.

A summary of publisher policies concerning the posting of electronic preprints.

Selected publications

J. Lähnemann, et al.
Luminescence associated with stacking faults in GaN (topical review)
J. Phys. D: Appl. Phys. 47, 423001 (2014)
[DOI:10.1088/0022-3727/47/42/423001] [arXiv:1405.1261] [BibTeX]

J. Lähnemann, et al.
Direct experimental determination of the spontaneous polarization of GaN
Phys. Rev. B 86, 081302(R) (2012)
[DOI:10.1103/PhysRevB.86.081302] [arXiv:1201.4294]
[PDF / © APS; download for personal use only] [BibTeX]

U. Jahn, et al.
Luminescence of GaAs nanowires consisting of wurtzite and zinc-blende segments
Phys. Rev. B 85, 045323 (2012)
[DOI:10.1103/PhysRevB.85.045323] [arXiv:1201.6540]
[PDF / © APS; download for personal use only] [BibTeX]

J. Lähnemann, et al.
Coexistence of quantum-confined Stark effect and localized states in an (In,Ga)N/GaN nanowire heterostructure
Phys. Rev. B 84, 155303 (2011)
[DOI:10.1103/PhysRevB.84.155303] [arXiv:1109.6039]
[PDF / © APS; download for personal use only] [BibTeX]

S. C. Erwin, et al.
Epitaxial Interfaces between Crystallographically Mismatched Materials
Phys. Rev. Lett. 107, 026102 (2011)
[DOI:10.1103/PhysRevLett.107.026102] [arXiv:1106.2955]
[PDF / © APS; download for personal use only] [BibTeX]

More publications



Recent talks

Localization and defects in axial (In,Ga)N/GaN nanowire heterostructures investigated by spatially resolved luminescence spectroscopy (invited talk)
October 2014, Sino-German Symposium 'III-V Materials and Devices on the Nanometer Scale', Berlin, Germany

Discrepancy between composition and emission energy for (In,Ga)N nanowires (contributed talk)
August 2014, International Workshop on Nitride Semiconductors (IWN), Wrocław, Poland

Spatially resolving the emission along the axis of (In,Ga)N/GaN nanowire heterostructures using cathodoluminescence spectroscopy (contributed talk)
November 2013, Nanowires 2013 (Workshop on the physics, chemistry and applications of nanowires), Rehovot, Israel

Stacking fault luminescence in GaN: emission energies, spontaneous polarization, and field screening (contributed talk)
August 2013, 10th International Conference on Nitride Semiconductors (ICNS), Washington, DC, USA

Cathodoluminescence of group-III-V semiconductor layers and nanostructures (invited talk)
June 2013, Gatan European Workshop on Cathodoluminescence and Ion-beam Cross Section Preparation, Berlin, Germany

More talks and conference presentations

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Copyleft 2000-2014 by Jonas Lähnemann
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