Jonas Lähnemann
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Jonas Lähnemann
Post doctoral research assistant

Nanophysics and Semiconductors (NPSC)
Service de PHotonique, ELectronique et Ingénierie QuantiqueS (PHELIQS)
Institut Nanosciences et Cryogénie (INAC)
Grenoble, France

On these pages you can find:

Information on my academic background

Pictures, mainly from trips and time abroad

Reports from my time studying in Kenya

Impressions from the time of my volunteer service in Israel

Information concerning my Flevo recumbent bicycle

Useful resources

A listing of my favourite open-source software.

A summary of publisher policies concerning the posting of electronic preprints.

Selected publications

J. Lähnemann, et al.
Radial Stark Effect in (In,Ga)N Nanowires
Nano Lett. 16, 917 (2016)
[DOI:10.1021/acs.nanolett.5b03748] [arXiv:1601.07201] [BibTeX] [ACS author link]

J. Lähnemann, et al.
Luminescence associated with stacking faults in GaN (topical review)
J. Phys. D: Appl. Phys. 47, 423001 (2014)
[DOI:10.1088/0022-3727/47/42/423001] [arXiv:1405.1261] [BibTeX]

J. Lähnemann, et al.
Direct experimental determination of the spontaneous polarization of GaN
Phys. Rev. B 86, 081302(R) (2012)
[DOI:10.1103/PhysRevB.86.081302] [arXiv:1201.4294]
[PDF / © APS; download for personal use only] [BibTeX]

U. Jahn, et al.
Luminescence of GaAs nanowires consisting of wurtzite and zinc-blende segments
Phys. Rev. B 85, 045323 (2012)
[DOI:10.1103/PhysRevB.85.045323] [arXiv:1201.6540]
[PDF / © APS; download for personal use only] [BibTeX]

S. C. Erwin, et al.
Epitaxial Interfaces between Crystallographically Mismatched Materials
Phys. Rev. Lett. 107, 026102 (2011)
[DOI:10.1103/PhysRevLett.107.026102] [arXiv:1106.2955]
[PDF / © APS; download for personal use only] [BibTeX]

More publications

Recent talks

Lecturer at International School on Nitride Materials and Devices
January 2016, Bilkent Üniversitesi, Ankara, Turkey

Luminescence associated with stacking faults in GaN (invited talk)
September 2015, 16th conference on Defects-Recognition, Imaging and Physics in Semiconductors (DRIP XVI), Suzhou, China

GaN/AlN nanowire heterostructures for intersubband applications (contributed talk)
September 2015, 11th International Conference on Nitride Semiconductors (ICNS-11), Beijing, China

Localization and defects in axial (In,Ga)N/GaN nanowire heterostructures investigated by spatially resolved luminescence spectroscopy (invited talk)
October 2014, Sino-German Symposium 'III-V Materials and Devices on the Nanometer Scale', Berlin, Germany

Discrepancy between composition and emission energy for (In,Ga)N nanowires (contributed talk)
August 2014, International Workshop on Nitride Semiconductors (IWN), Wrocław, Poland

More talks and conference presentations

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