Jonas Lähnemann
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Jonas Lähnemann
Post doctoral research assistant
Semiconductor spectroscopy
Paul Drude Institute for Solid State Electronics
Berlin, Germany

On these pages you can find:

Information on my academic background

Pictures, mainly from trips and time abroad

Reports from my time studying in Kenya

Impressions from the time of my volunteer service in Israel

Information concerning my Flevo recumbent bicycle

Useful resources

A listing of my favourite open-source software.

A summary of publisher policies concerning the posting of electronic preprints.

Selected publications

J. Kamimura, et al.
Photoelectrochemical Properties of (In,Ga)N Nanowires for Water Splitting Investigated by in Situ Electrochemical Mass Spectroscopy
J. Am. Chem. Soc. 135, 10242--10245 (2013)
[DOI:10.1021/ja404043k] [BibTeX]

J. Lähnemann, et al.
Direct experimental determination of the spontaneous polarization of GaN
Phys. Rev. B 86, 081302(R) (2012)
[DOI:10.1103/PhysRevB.86.081302] [arXiv:1201.4294]
[PDF / © APS; download for personal use only] [BibTeX]

U. Jahn, et al.
Luminescence of GaAs nanowires consisting of wurtzite and zinc-blende segments
Phys. Rev. B 85, 045323 (2012)
[DOI:10.1103/PhysRevB.85.045323] [arXiv:1201.6540]
[PDF / © APS; download for personal use only] [BibTeX]

J. Lähnemann, et al.
Coexistence of quantum-confined Stark effect and localized states in an (In,Ga)N/GaN nanowire heterostructure
Phys. Rev. B 84, 155303 (2011)
[DOI:10.1103/PhysRevB.84.155303] [arXiv:1109.6039]
[PDF / © APS; download for personal use only] [BibTeX]

S. C. Erwin, et al.
Epitaxial Interfaces between Crystallographically Mismatched Materials
Phys. Rev. Lett. 107, 026102 (2011)
[DOI:10.1103/PhysRevLett.107.026102] [arXiv:1106.2955]
[PDF / © APS; download for personal use only] [BibTeX]

More publications

Recent talks

Spatially resolving the emission along the axis of (In,Ga)N/GaN nanowire heterostructures using cathodoluminescence spectroscopy (contributed talk)
November 2013, Nanowires 2013 (Workshop on the physics, chemistry and applications of nanowires), Rehovot, Israel

Stacking fault luminescence in GaN: emission energies, spontaneous polarization, and field screening (contributed talk)
August 2013, 10th International Conference on Nitride Semiconductors (ICNS), Washington, DC, USA

Cathodoluminescence of group-III-V semiconductor layers and nanostructures (invited talk)
June 2013, Gatan European Workshop on Cathodoluminescence and Ion-beam Cross Section Preparation, Berlin, Germany

Experimental determination of the spontaneous polarization of GaN (seminar talk)
October 2012, Scientific Advisory Board Meeting of the Paul Drude Institute, Berlin, Germany

Filamentation of the current flow in light emitting diodes based on nanowire ensembles (invited talk)
September 2012, Sino-German Workshop 'Frontier Research on Smart Nanodevices', Braunschweig, Germany

More talks and conference presentations

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