@Article{Vogt_prl_2017,
  author    = {Vogt, Patrick and Brandt, Oliver and Riechert, Henning and L\"ahnemann, Jonas and Bierwagen, Oliver},
  title     = {Metal-Exchange Catalysis in the Growth of Sesquioxides: Towards Heterostructures of Transparent Oxide Semiconductors},
  journal   = {Phys. Rev. Lett.},
  year      = {2017},
  volume    = {119},
  pages     = {196001},
  abstract  = {We observe that the growth rate of Ga2O3 in plasma-assisted molecular beam epitaxy can be drastically enhanced by an additional In supply. This enhancement is shown to result from a catalytic effect, namely, the rapid formation of In2O3, immediately followed by a transformation of In2O3 to Ga2O3 due to an In-Ga interatomic exchange. We derive a simple model that quantitatively describes this process as well as its consequences on the formation rate of Ga2O3. Moreover, we demonstrate that the catalytic action of In2O3 allows the synthesis of the metastable hexagonal phase of Ga2O3. Since the Ga2O3(0001)/In2O3(111) interface is closely lattice matched, this novel growth mode opens a new path for the fabrication of sesquioxide heterostructures.},
  doi       = {10.1103/PhysRevLett.119.196001},
  issue     = {19}
}