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Publications
The following list provides PDF downloads and/or links to arXiv preprints of the articles (where available) depending on the journal/publisher policy.
2024
H. W. Jeong, A. Ajay, M. Döblinger, S. Sturm, M. Gómez Ruiz, R. Zell, N. Mukhundhan, D. Stelzner, J. Lähnemann, K. Müller-Caspary, J. J. Finley and G. Koblmüller
Axial Growth Characteristics of Optically Active InGaAs Nanowire Heterostructures for Integrated Nanophotonic Devices
ACS Applied Nano Materials 7, 3032 (2024)
[DOI:10.1021/acsanm.3c05392] [BibTeX]
2023
K. Egbo, E. Luna, J. Lähnemann, G. Hoffmann, A. Trampert, J. Grümbel, E. Kluth, M. Feneberg, R. Goldhahn and O. Bierwagen
Epitaxial synthesis of unintentionally p-doped SnO (001) via suboxide molecular beam epitaxy
J. Appl. Phys. 133, 045701 (2023)
[DOI:10.1063/5.0131138] [arXiv:2209.11678] [BibTeX]
Y. Takagaki, M. Hanke, M. Ramsteiner and J. Lähnemann
Comparative study of electrical properties of chalcogenide films produced by reaction of Cu, Ag, Ni and NiCu with Sb2S3 in hot wall epitaxy
J. Alloys Compd. 931, 167565 (2023)
[DOI:10.1016/j.jallcom.2022.167565] [BibTeX]
K. Egbo, J. Lähnemann, A. Falkenstein, J. Varley and O. Bierwagen
Acceptor and compensating donor doping of single crystalline SnO (001) films grown by molecular beam epitaxy and its perspectives for optoelectronics and gas-sensing
Appl. Phys. Lett. 122, 122101 (2023)
[DOI:10.1063/5.0130935] [arXiv:2212.06350] [BibTeX]
D. V. Dinh, J. Lähnemann, L. Geelhaar and O. Brandt
Lattice parameters of ScxAl1-xN layers grown on GaN(0001) by plasma-assisted molecular beam epitaxy
Appl. Phys. Lett. 122, 152103 (2023)
[DOI:10.1063/5.0137873] [arXiv:2211.16920] [BibTeX]
L. van Deurzen, J. Singhal, J. Encomendero, N. Pieczulewski, C. S. Chang, Y. Cho, D. A. Muller, H. G. Xing, D. Jena, O. Brandt and J. Lähnemann
Excitonic and deep-level emission from N- and Al-polar homoepitaxial AlN grown by molecular beam epitaxy
APL Mater. 11, 081109 (2023)
[DOI:10.1063/5.0158390] [arXiv:2305.10542] [BibTeX]
[PDF / CC-BY]
M. Oliva, T. Flissikowski, M. Góra, J. Lähnemann, J. Herranz, R. B. Lewis, O. Marquardt, M. Ramsteiner, L. Geelhaar and O. Brandt
Carrier Recombination in Highly Uniform and Phase-Pure GaAs/(Al,Ga)As Core/Shell Nanowire Arrays on Si(111): Implications for Light-Emitting Devices
ACS Appl. Nano Mater. 6, 15278--15293 (2023)
[DOI:10.1021/acsanm.3c03242] [arXiv:2211.17167] [BibTeX]
P. M. John, M. G. Ruiz, L. van Deurzen, J. Lähnemann, A. Trampert, L. Geelhaar, O. Brandt and T. Auzelle
Growth kinetics and substrate stability during high-temperature molecular beam epitaxy of AlN nanowires
Nanotechnology 34, 465605 (2023)
[DOI:10.1088/1361-6528/acefd8] [arXiv:2306.09184] [BibTeX]
[PDF / CC-BY]
D. V. Dinh, F. Peiris, J. Lähnemann and O. Brandt
Optical properties of ScN layers grown on Al2O3(0001) by plasma-assisted molecular beam epitaxy
Appl. Phys. Lett. 123, 112102 (2023)
[DOI:10.1063/5.0164058] [BibTeX]
D. van Treeck, J. Lähnemann, O. Brandt and L. Geelhaar
Growth mechanisms in molecular beam epitaxy for GaN-(In,Ga)N core-shell nanowires emitting in the green spectral range
Nanotechnology 34, 485603 (2023)
[DOI:10.1088/1361-6528/acf3f5] [arXiv:2306.12787] [BibTeX]
[PDF / CC-BY]
D. van Treeck, J. Lähnemann, G. Gao, S. F. Garrido, O. Brandt and L. Geelhaar
Sequential directional deposition of one-sided (In,Ga)N shells on GaN nanowires by molecular beam epitaxy
APL Mater. 11, (2023)
[DOI:10.1063/5.0168786] [arXiv:2307.11235] [BibTeX]
[PDF / CC-BY]
2022
U. Jahn, V. M. Kaganer, K. K. Sabelfeld, A. E. Kireeva, J. Lähnemann, C. Pfüller, T. Flissikowski, C. Chèze, K. Biermann, R. Calarco and O. Brandt
Carrier Diffusion in GaN: A Cathodoluminescence Study. I. Temperature-Dependent Generation Volume
Phys. Rev. Appl. 17, 024017 (2022)
[DOI:10.1103/PhysRevApplied.17.024017] [arXiv:2002.08713] [BibTeX]
[PDF / © APS; download for personal use only]
O. Brandt, V. M. Kaganer, J. Lähnemann, T. Flissikowski, C. Pfüller, K. K. Sabelfeld, A. E. Kireeva, C. Chèze, R. Calarco, H. T. Grahn and U. Jahn
Carrier Diffusion in GaN: A Cathodoluminescence Study. II. Ambipolar versus Exciton Diffusion
Phys. Rev. Appl. 17, 024018 (2022)
[DOI:10.1103/PhysRevApplied.17.024018] [arXiv:2009.13983] [BibTeX]
[PDF / © APS; download for personal use only]
J. Lähnemann, V. M. Kaganer, K. K. Sabelfeld, A. E. Kireeva, U. Jahn, C. Chèze, R. Calarco and O. Brandt
Carrier Diffusion in GaN: A Cathodoluminescence Study. III. Nature of Nonradiative Recombination at Threading Dislocations
Phys. Rev. Appl. 17, 024019 (2022)
[DOI:10.1103/PhysRevApplied.17.024019] [arXiv:2009.14634] [BibTeX]
[PDF / © APS; download for personal use only]
A. Ardenghi, O. Bierwagen, A. Falkenstein, G. Hoffmann, J. Lähnemann, M. Martin and P. Mazzolini
Toward controllable Si-doping in oxide molecular beam epitaxy using a solid SiO source: Application to β-Ga2O3
Appl. Phys. Lett. 121, 042109 (2022)
[DOI:10.1063/5.0087987] [arXiv:2202.05762] [BibTeX]
[PDF / © AIP; download for personal use only]
A. Papadogianni, C. Wouters, R. Schewski, J. Feldl, J. Lähnemann, T. Nagata, E. Kluth, M. Feneberg, R. Goldhahn, M. Ramsteiner, M. Albrecht and O. Bierwagen
Molecular beam epitaxy of single-crystalline bixbyite (In1-xGax)2O3 films (x ≤ 0.18): Structural properties and consequences of compositional inhomogeneity
Phys. Rev. Materials 6, 033604 (2022)
[DOI:10.1103/PhysRevMaterials.6.033604] [arXiv:2106.09612] [BibTeX]
[PDF / © APS; download for personal use only]
T. Auzelle, C. Sinito, J. Lähnemann, G. Gao, T. Flissikowski, A. Trampert, S. Fernández-Garrido and O. Brandt
Interface recombination in Ga- and N-polar GaN/(Al,Ga)N quantum wells grown by molecular beam epitaxy
Phys. Rev. Applied 17, 044030 (2022)
[DOI:10.1103/PhysRevApplied.17.044030] [arXiv:2111.12969] [BibTeX]
[PDF / © APS; download for personal use only]
2021
L. van Deurzen, M. G. Ruiz, K. Lee, H. Turski, S. Bharadwaj, R. Page, V. Protasenko, H. G. Xing, J. Lähnemann and D. Jena
Dislocation and indium droplet related emission inhomogeneities in InGaN LEDs
J. Phys. D: Appl. Phys. 54, 495106 (2021)
[DOI:10.1088/1361-6463/ac2446] [arXiv:2106.10809] [BibTeX]
[PDF / © CC-BY 4.0 license]
P. Wojnar, J. K. Płachta, A. Reszka, J. Lähnemann, A. Kaleta, S. Kret, P. Baranowski, M. Wójcik, B. J. Kowalski and L. T. Baczewski
Near-infrared emission from spatially indirect excitons in type II ZnTe/CdSe/(Zn,Mg)Te core/double-shell nanowires
Nanotechnology 32, 495202 (2021)
[DOI:10.1088/1361-6528/ac218c] [arXiv:2109.00272] [BibTeX]
[PDF / © CC-BY 4.0 license]
J. Feldl, M. Feneberg, A. Papadogianni, J. Lähnemann, T. Nagata, O. Bierwagen, R. Goldhahn and M. Ramsteiner
Bandgap widening and behavior of Raman-active phonon modes of cubic single-crystalline (In,Ga)2O3 alloy films
Appl. Phys. Lett. 119, 042101 (2021)
[DOI:10.1063/5.0056532] [arXiv:2104.08092] [BibTeX]
2020
A. Al Hassan, J. Lähnemann, A. Davtyan, M. Al-Humaidi, J. Herranz, D. Bahrami, T. Anjum, F. Bertram, A. B. Dey, L. Geelhaar and U. Pietsch
Beam damage of single semiconductor nanowires during X-ray nanobeam diffraction experiments
J. Synchrotron Radiat. 27, 1200–1208 (2020)
[DOI:10.1107/S1600577520009789] [arXiv:2006.11920] [BibTeX] [PDF / © CC-BY 4.0 license]
S. Fernández-Garrido, C. Pisador, J. Lähnemann, S. Lazić, A. Ruiz and A. Redondo-Cubero
Coalescence, crystallographic orientation and luminescence of ZnO nanowires grown on Si(001) by chemical vapour transport
Nanotechnology 31, 475603 (2020)
[DOI:10.1088/1361-6528/abadc8] [arXiv:2005.14704] [BibTeX]
M. Spies, Z. Sadre-momtaz, J. Lähnemann, M. A. Luong, B. Fernandez, T. Fournier, E. Monroy and M. den Hertog
Correlated and in-situ electrical transmission electron microscopy studies and related membrane-chip fabrication
Nanotechnology 31, 472001 (2020)
[DOI:10.1088/1361-6528/ab99f0] [arXiv:2001.09179] [BibTeX]
A. Al Hassan, J. Lähnemann, S. Leake, H. Küpers, M. Niehle, D. Bahrami, F. Bertram, R. B. Lewis, A. Davtyan, T. Schuelli, L. Geelhaar and U. Pietsch
Spatially-resolved luminescence and crystal structure of single core-shell nanowires measured in the as-grown geometry
Nanotechnology 31, 214002 (2020)
[DOI:10.1088/1361-6528/ab7590] [arXiv:2002.08172] [BibTeX]
I. Dimkou, A. Harikumar, F. Donatini, J. Lähnemann, M. den Hertog, C. Bougerol, E. Bellet-Amalric, N. Mollard, A. Ajay, G. Ledoux, S. T. Purcell and E. Monroy
Assessment of AlGaN/AlN superlattices on GaN nanowires as active region of electron-pumped ultraviolet sources
Nanotechnology 31, 204001 (2020)
[DOI:10.1088/1361-6528/ab704d] [arXiv:1911.13133 ] [BibTeX]
M. Azadmand, T. Auzelle, J. Lähnemann, G. Gao, L. Nicolai, M. Ramsteiner, A. Trampert, S. Sanguinetti, O. Brandt and L. Geelhaar
Self-Assembly of Well-Separated AlN Nanowires Directly on Sputtered Metallic TiN Films
physica status solidi RRL 14, 1900615 (2020)
[DOI:10.1002/pssr.201900615] [arXiv:1910.07391] [BibTeX] [PDF / © CC-BY 4.0 license]
J. Herranz, P. Corfdir, E. Luna, U. Jahn, R. B. Lewis, L. Schrottke, J. Lähnemann, A. Tahraoui, A. Trampert, O. Brandt and L. Geelhaar
Coaxial GaAs/(In,Ga)As Dot-in-a-Well Nanowire Heterostructures for Electrically Driven Infrared Light Generation on Si in the Telecommunication O Band
ACS Applied Nano Materials 3, 165 (2020)
[DOI:10.1021/acsanm.9b01866] [arXiv:1908.10134] [BibTeX]
M. Budde, T. Remmele, C. Tschammer, J. Feldl, P. Franz, J. Lähnemann, Z. Cheng, M. Hanke, M. Ramsteiner, M. Albrecht and O. Bierwagen
Plasma-assisted molecular beam epitaxy of NiO on GaN(00.1)
J. Appl. Phys. 127, 015306 (2020)
[DOI:10.1063/1.5129881] [arXiv:1910.07810] [BibTeX]
[PDF / © AIP; download for personal use only]
2019
C. Golz, Z. Galazka, J. Lähnemann, V. Hortelano, F. Hatami, W. T. Masselink and O. Bierwagen
Electrical conductivity tensor of β-Ga2O3 analyzed by van der Pauw measurements: Inherent anisotropy, off-diagonal element, and the impact of grain boundaries
Phys. Rev. Materials 3, 124604 (2019)
[DOI:10.1103/PhysRevMaterials.3.124604] [arXiv:1806.08162] [BibTeX]
[PDF / © APS; download for personal use only]
V. M. Kaganer, J. Lähnemann, C. Pfüller, K. K. Sabelfeld, A. E. Kireeva and O. Brandt
Determination of the Carrier Diffusion Length in GaN from Cathodoluminescence Maps Around Threading Dislocations: Fallacies and Opportunities
Phys. Rev. Appl. 12, 054038 (2019)
[DOI:10.1103/PhysRevApplied.12.054038] [arXiv:1906.05645] [BibTeX]
[PDF / © APS; download for personal use only]
C. Sinito, P. Corfdir, C. Pfüller, G. Gao, J. Bartolomé Vílchez, S. Koelling, A. Rodil Doblado, U. Jahn, J. Lähnemann, T. Auzelle, J. K. Zettler, T. Flissikowski, P. M. Koenraad, H. T. Grahn, L. Geelhaar, S. Fernandez-Garrido and O. Brandt
Absence of quantum-confined Stark effect in GaN quantum disks embedded in (Al,Ga)N nanowires grown by molecular beam epitaxy
Nano Lett. 19, 5938 (2019)
[DOI:10.1021/acs.nanolett.9b01521] [arXiv:1905.04090] [BibTeX] [ACS author link *]
D. van Treeck, J. Ledig, G. Scholz, J. Lähnemann, M. Musolino, A. Tahraoui, O. Brandt, A. Waag and H. Riechert
Electroluminescence and current–voltage measurements of single-(In,Ga)N/GaN-nanowire light-emitting diodes in a nanowire ensemble
Beilstein J. Nanotechnol. 10, 1177 (2019)
[DOI:10.3762/bjnano.10.117] [arXiv:1908.08863] [BibTeX] [PDF / © CC-BY 4.0 license]
J. Lähnemann, M. O. Hill, J. Herranz, O. Marquardt, G. Gao, A. A. Hassan, A. Davtyan, S. O. Hruszkewycz, M. V. Holt, C. Huang, I. Calvo-Almazán, U. Jahn, U. Pietsch, L. J. Lauhon and L. Geelhaar
Correlated nanoscale analysis of the emission from wurtzite versus zincblende (In,Ga)As/GaAs nanowire core-shell quantum wells
Nano Lett. 19, 4448 (2019)
[DOI:10.1021/acs.nanolett.9b01241]
[arXiv:1903.07372] [BibTeX] [ACS author link *]
S. Fernández-Garrido, T. Auzelle, J. Lähnemann, K. Wimmer, A. Tahraoui and O. Brandt
Top-down fabrication of ordered arrays of GaN nanowires by selective area sublimation
Nanoscale Adv. 1, 1893 (2019)
[DOI:10.1039/C8NA00369F] [arXiv:1905.04948] [BibTeX]
[PDF / © CC-BY-NC 3.0 license]
J. Lähnemann, D. A. Browne, A. Ajay, M. Jeannin, A. Vasanelli, J.-L. Thomassin, E. Bellet-Amalric and E. Monroy
Near- and mid-infrared intersubband absorption in top-down GaN/AlN nano- and micropillars
Nanotechnology 30, 054002 (2019)
[DOI:10.1088/1361-6528/aaef72] [arXiv:1805.08999] [BibTeX] [cover art]
2018
A. Hernández-Mínguez, J. Lähnemann, S. Nakhaie, J. M. J. Lopes and P. V. Santos
Luminescent Defects in a Few-Layer h-BN Film Grown by Molecular Beam Epitaxy
Phys. Rev. Applied 10, 044031 (2018)
[DOI:10.1103/PhysRevApplied.10.044031] [arXiv:1902.08528] [BibTeX]
[PDF / © APS; download for personal use only]
M. Spies, J. Polaczynski, A. Ajay, D. Kalita, J. Lähnemann, B. Gayral, M. den Hertog and E. Monroy
Effect of the nanowire diameter on the linearity of the response of GaN-based heterostructured nanowire photodetectors
Nanotechnology 29, 255204 (2018)
[DOI:10.1088/1361-6528/aab838] [arXiv:1904.12515] [BibTeX]
C. Chèze, F. Feix, J. Lähnemann, T. Flissikowski, M. Kryśko, P. Wolny, H. Turski, C. Skierbiszewski and O. Brandt
Luminescent N-polar (In,Ga)N/GaN quantum wells achieved by plasma-assisted molecular beam epitaxy at temperature exceeding 700 °C
Appl. Phys. Lett. 112, 022102 (2018)
[DOI:10.1063/1.5009184] [arXiv:1710.08351] [BibTeX] [PDF / © AIP; download for personal use only]
2017
P. Vogt, O. Brandt, H. Riechert, J. Lähnemann and O. Bierwagen
Metal-Exchange Catalysis in the Growth of Sesquioxides: Towards Heterostructures of Transparent Oxide Semiconductors
Phys. Rev. Lett. 119, 196001 (2017)
[DOI:10.1103/PhysRevLett.119.196001] [BibTeX] [PDF / © APS; download for personal use only]
J. Lähnemann, A. Ajay, M. I. Den Hertog and E. Monroy
Near-infrared intersubband photodetection in GaN/AlN nanowires
Nano Lett. 17, 6954 (2017)
[DOI:10.1021/acs.nanolett.7b03414] [arXiv:1710.00871] [BibTeX] [ACS author link *]
C. B. Lim, A. Ajay, J. Lähnemann, C. Bougerol and E. Monroy
Effect of Ge-doping on the short-wave, mid- and far-infrared intersubband transitions in GaN/AlGaN heterostructures
Semicond. Sci. Technol. 32, 125002 (2017)
[DOI:10.1088/1361-6641/aa919c] [arXiv:1903.09375] [BibTeX] [accepted manuscript / © CC-BY-NC-ND 3.0 license]
S. Assali, J. Lähnemann, T. Vu, K. D. Jöns, L. Gagliano, M. A. Verheijen, N. Akopian, E. P. Bakkers and J. E. Haverkort
Crystal phase quantum well emission with digital control
Nano Lett. 17, 6062 (2017)
[DOI:10.1021/acs.nanolett.7b02489] [BibTeX] [PDF / © CC-BY-NC-ND license]
M. Spies, M. I. den Hertog, P. Hille, J. Schörmann, J. Polaczyński, B. Gayral, M. Eickhoff, E. Monroy and J. Lähnemann
Bias-Controlled Spectral Response in GaN/AlN Single-Nanowire Ultraviolet Photodetectors
Nano Lett. 17, 4231 (2017)
[DOI:10.1021/acs.nanolett.7b01118] [arXiv:1712.01869] [BibTeX] [ACS author link *]
J. Kamimura, P. Bogdanoff, F. F. Abdi, J. Lähnemann, R. van de Krol, H. Riechert and L. Geelhaar
Photoelectrochemical Properties of GaN Photoanodes with Cobalt Phosphate Catalyst for Solar Water Splitting in Neutral Electrolyte
J. Phys. Chem. C 121, 12540 (2017)
[DOI:10.1021/acs.jpcc.7b02253] [BibTeX] [ACS author link *]
2016
J. Lähnemann, T. Flissikowski, M. Wölz, L. Geelhaar, H. T. Grahn, O. Brandt and U. Jahn
Quenching of the luminescence intensity of GaN nanowires under electron beam exposure: impact of C adsorption on the exciton lifetime
Nanotechnology 27, 455706 (2016)
[DOI:10.1088/0957-4484/27/45/455706] [arXiv:1607.03397] [BibTeX]
S. Fernández-Garrido, J. Lähnemann, C. Hauswald, M. Korytov, M. Albrecht, C. Chèze, C. Skierbiszewski and O. Brandt
Comparison of the Luminous Efficiencies of Ga- and N-Polar InxGa1-xN/InyGa1-yN Quantum Wells Grown by Plasma-Assisted Molecular Beam Epitaxy
Phys. Rev. Applied 6, 034017 (2016)
[DOI:10.1103/PhysRevApplied.6.034017] [arXiv:1510.06512] [BibTeX]
[PDF / © APS; download for personal use only]
U. Jahn, M. Musolino, J. Lähnemann, P. Dogan, S. F. Garrido, J. F. Wang, K. Xu, D. Cai, L. F. Bian, X. J. Gong and H. Yang
The hydride vapor phase epitaxy of GaN on silicon covered by nanostructures
Semicond. Sci. Technol. 31, 065018 (2016)
[DOI:10.1088/0268-1242/31/6/065018] [arXiv:1605.03089] [BibTeX]
J. Lähnemann, M. Den Hertog, P. Hille, M. de la Mata, T. Fournier, J. Schörmann, J. Arbiol, M. Eickhoff and E. Monroy
UV Photosensing Characteristics of Nanowire-Based GaN/AlN Superlattices
Nano Lett. 16, 3260 (2016)
[DOI:10.1021/acs.nanolett.6b00806] [arXiv:1604.07978] [BibTeX] [ACS author link *]
C. B. Lim, M. Beeler, A. Ajay, J. Lähnemann, E. Bellet-Amalric, C. Bougerol, J. Schörmann, M. Eickhoff and E. Monroy
Short-wavelength, mid- and far-infrared intersubband absorption in nonpolar GaN/Al(Ga)N heterostructures
Jpn. J. Appl. Phys. 55, 05FG05 (2016)
[DOI:10.7567/JJAP.55.05FG05] [BibTeX]
C. B. Lim, A. Ajay, C. Bougerol, J. Lähnemann, F. Donatini, J. Schörmann, E. Bellet-Amalric, D. A. Browne, M. Jiménez-Rodréguez and E. Monroy
Effect of doping on the far-infrared intersubband transitions in nonpolar m-plane GaN/AlGaN heterostructures
Nanotechnology 27, 145201 (2016)
[DOI:10.1088/0957-4484/27/14/145201] [BibTeX]
J. Lähnemann, P. Corfdir, F. Feix, J. Kamimura, T. Flissikowski, H. T. Grahn, L. Geelhaar and O. Brandt
Radial Stark Effect in (In,Ga)N Nanowires
Nano Lett. 16, 917 (2016)
[DOI:10.1021/acs.nanolett.5b03748] [arXiv:1601.07201] [BibTeX] [ACS author link *]
2015
C. B. Lim, A. Ajay, C. Bougerol, B. Haas, J. Schörmann, M. Beeler, J. Lähnemann, M. Eickhoff and E. Monroy
Nonpolar m-plane GaN/AlGaN heterostructures with intersubband transitions in the 5--10 THz band
Nanotechnology 26, 435201 (2015)
[DOI:10.1088/0957-4484/26/43/435201] [arXiv:1506.00353] [BibTeX]
F. Isa, C. Chèze, M. Siekacz, C. Hauswald, J. Lähnemann, S. Fernández-Garrido, T. Kreiliger, M. Ramsteiner, Y. A. R. Dasilva, O. Brandt, G. Isella, R. Erni, R. Calarco, H. Riechert and L. Miglio
Integration of GaN Crystals on Micropatterned Si(001) Substrates by Plasma-Assisted Molecular Beam Epitaxy
Cryst. Growth Des. 15, 4886 (2015)
[DOI:10.1021/acs.cgd.5b00727] [BibTeX] [ACS author link *]
C. B. Lim, M. Beeler, A. Ajay, J. Lähnemann, E. Bellet-Amalric, C. Bougerol and E. Monroy
Intersubband transitions in nonpolar GaN/Al(Ga)N heterostructures in the short- and mid-wavelength infrared regions
J. Appl. Phys. 118, 014309 (2015)
[DOI:10.1063/1.4926423] [arXiv:1504.04989] [BibTeX] [PDF / © AIP; download for personal use only]
2014
P. Corfdir, C. Hauswald, J. K. Zettler, T. Flissikowski, J. Lähnemann, S. Fernández-Garrido, L. Geelhaar, H. T. Grahn and O. Brandt
Stacking faults as quantum wells in nanowires: Density of states, oscillator strength and radiative efficiency
Phys. Rev. B 90, 195309 (2014)
[DOI:10.1103/PhysRevB.90.195309] [arXiv:1408.5263] [BibTeX] [PDF / © APS; download for personal use only]
J. Lähnemann, U. Jahn, O. Brandt, T. Flissikowski, P. Dogan and H. T. Grahn
Luminescence associated with stacking faults in GaN (topical review), J. Phys. D - Highlight of 2014
J. Phys. D: Appl. Phys. 47, 423001 (2014)
[DOI:10.1088/0022-3727/47/42/423001] [arXiv:1405.1261] [BibTeX]
J. Lähnemann, C. Hauswald, M. Wölz, U. Jahn, M. Hanke, L. Geelhaar and O. Brandt
Localization and defects in axial (In,Ga)N/GaN nanowire heterostructures investigated by spatially resolved luminescence spectroscopy
J. Phys. D: Appl. Phys. 47, 394010 (2014)
[DOI:10.1088/0022-3727/47/39/394010] [arXiv:1405.1507] [BibTeX]
M. Musolino, A. Tahraoui, F. Limbach, J. Lähnemann, U. Jahn, O. Brandt, L. Geelhaar and H. Riechert
Understanding peculiarities in the optoelectronic characteristics of light emitting diodes based on (In,Ga)N/GaN nanowires
Appl. Phys. Lett. 105, 083505 (2014)
[DOI:http://dx.doi.org/10.1063/1.4894241] [arXiv:1410.3709] [BibTeX]
[PDF / © AIP; download for personal use only]
2013
X. Wang, S. Li, M. S. Mohajerani, J. Ledig, H.-H. Wehmann, M. Mandl, M. Strassburg, U. Steegmüller, U. Jahn, J. Lähnemann, H. Riechert, I. Griffiths, D. Cherns and A. Waag
Continuous-Flow MOVPE of Ga-Polar GaN Column Arrays and Core–Shell LED Structures
Cryst. Growth Des. 13, 3475 (2013)
[DOI:10.1021/cg4003737] [BibTeX] [ACS author link *]
J. Kamimura, P. Bogdanoff, J. Lähnemann, C. Hauswald, L. Geelhaar, S. Fiechter and H. Riechert
Photoelectrochemical Properties of (In,Ga)N Nanowires for Water Splitting Investigated by in Situ Electrochemical Mass Spectroscopy
J. Am. Chem. Soc. 135, 10242 (2013)
[DOI:10.1021/ja404043k] [BibTeX] [ACS author link *]
C. Chèze, M. Siekacz, G. Muziol, H. Turski, S. Grzanka, M. Kryśko, J. L. Weyher, M. Boćkowski, C. Hauswald, J. Lähnemann, O. Brandt, M. Albrecht and C. Skierbiszewski
Investigation on the origin of luminescence quenching in N-polar (In,Ga)N multiple quantum wells
J. Vac. Sci. Technol. B 31, 03C130 (2013)
[DOI:10.1116/1.4802964] [BibTeX]
[PDF / © AVS; download for personal use only]
B. Wilsch, U. Jahn, B. Jenichen, J. Lähnemann, H. T. Grahn, H. Wang and H. Yang
Spatially resolved investigation of strain and composition variations in (In,Ga)N/GaN epilayers
Appl. Phys. Lett. 102, 052109 (2013)
[DOI:10.1063/1.4790591] [arXiv:1301.4138]
[BibTeX]
[PDF / © AIP; download for personal use only]
2012
F. Limbach, C. Hauswald, J. Lähnemann, M. Wölz, O. Brandt, A. Trampert, M. Hanke, U. Jahn, R. Calarco, L. Geelhaar and H. Riechert
Current path in light emitting diodes based on nanowire ensembles
Nanotechnology 23, 465301 (2012)
[DOI:10.1088/0957-4484/23/46/465301]
[arXiv:1210.7144]
[BibTeX]
M. Wölz, J. Lähnemann, O. Brandt, V. M. Kaganer, M. Ramsteiner, C. Pfüller, C. Hauswald, C. N. Huang, L. Geelhaar and H. Riechert
Correlation between In content and emission wavelength of InxGa1-xN/GaN nanowire heterostructures
Nanotechnology 23, 455203 (2012)
[DOI:10.1088/0957-4484/23/45/455203]
[arXiv:1210.7597]
[BibTeX]
J. Lähnemann, O. Brandt, U. Jahn, C. Pfüller, C. Roder, P. Dogan, F. Grosse, A. Belabbes, F. Bechstedt, A. Trampert and L. Geelhaar
Direct experimental determination of the spontaneous polarization of GaN
Phys. Rev. B 86, 081302(R) (2012)
[DOI:10.1103/PhysRevB.86.081302]
[arXiv:1201.4294]
[BibTeX]
[PDF / © APS; download for personal use only]
F. Gericke, T. Flissikowski, J. Lähnemann, F. Katmis, W. Braun, H. Riechert and H. T. Grahn
Optical switching and related structural properties of epitaxial Ge2Sb2Te5 films
J. Appl. Phys. 111, 113524 (2012)
[DOI:10.1063/1.4728221]
[BibTeX]
[PDF / © AIP; download for personal use only]
U. Jahn, J. Lähnemann, C. Pfüller, O. Brandt, S. Breuer, B. Jenichen, M. Ramsteiner, L. Geelhaar and H. Riechert
Luminescence of GaAs nanowires consisting of wurtzite and zinc-blende segments
Phys. Rev. B 85, 045323 (2012)
[DOI:10.1103/PhysRevB.85.045323]
[arXiv:1201.6540]
[BibTeX]
[PDF / © APS; download for personal use only]
2011
Y. Takagaki, B. Jenichen, U. Jahn, M. Ramsteiner, K.-J. Friedland and J. Lähnemann
Hot wall epitaxy of topological insulator films
Semicond. Sci. Technol. 26, 125009 (2011)
[DOI:10.1088/0268-1242/26/12/125009] [BibTeX]
J. Lähnemann, O. Brandt, C. Pfüller, T. Flissikowski, U. Jahn, E. Luna, M. Hanke, M. Knelangen, A. Trampert and H. T. Grahn
Coexistence of quantum-confined Stark effect and localized states in an (In,Ga)N/GaN nanowire heterostructure
Phys. Rev. B 84, 155303 (2011)
[DOI:10.1103/PhysRevB.84.155303]
[arXiv:1109.6039]
[BibTeX]
[PDF / © APS; download for personal use only]
P. Dogan, O. Brandt, C. Pfüller, J. Lähnemann, U. Jahn, C. Roder, A. Trampert, L. Geelhaar and H. Riechert
Formation of High-Quality GaN Microcrystals by Pendeoepitaxial Overgrowth of GaN Nanowires on Si(111) by Molecular Beam Epitaxy
Cryst. Growth Des. 11, 4257 (2011)
[DOI:10.1021/cg200801x] [BibTeX]
E. Dimakis, J. Lähnemann, U. Jahn, S. Breuer, M. Hilse, L. Geelhaar and H. Riechert
Self-Assisted Nucleation and Vapor-Solid Growth of InAs Nanowires on Bare Si(111)
Cryst. Growth Des. 11, 4001 (2011)
[DOI:10.1021/cg200568m] [BibTeX]
S. C. Erwin, C. Gao, C. Roder, J. Lähnemann and O. Brandt
Epitaxial Interfaces between Crystallographically Mismatched Materials
Phys. Rev. Lett. 107, 026102 (2011)
[DOI:10.1103/PhysRevLett.107.026102]
[arXiv:1106.2955]
[BibTeX]
[PDF / © APS; download for personal use only]
C. Gao, O. Brandt, J. Lähnemann, J. Herfort, H.-P. Schönherr, U. Jahn and B. Jenichen
Effect of growth temperature on the structural, morphological and magnetic properties of Fe films on GaN(0001)
J. Cryst. Growth 323, 359 (2011)
[DOI:10.1016/j.jcrysgro.2010.10.117]
[BibTeX]
W. Bergbauer, M. Strassburg, C. Kölper, N. Linder, C. Roder, J. Lähnemann, A. Trampert, S. Fündling, S. Li, H.-H. Wehmann and A. Waag
N-face GaN nanorods: Continuous-flux MOVPE growth and morphological properties
J. Cryst. Growth 315, 164 (2011)
[DOI:10.1016/j.jcrysgro.2010.07.067]
[BibTeX]
H. Riechert, O. Brandt, C. Cheze, V. Consonni, M. Knelangen, J. Lähnemann, F. Limbach, C. Pfüller, A. Trampert, M. Wölz and L. Geelhaar
Nitride nanowire structures for LED applications
Proc. SPIE 7954, 79540S (2011)
[DOI:10.1117/12.877458]
[BibTeX]
2010
C. Gao, O. Brandt, S. C. Erwin, J. Lähnemann, U. Jahn, B. Jenichen and H.-P. Schönherr
"Cube-on-hexagon" orientation relationship for Fe on GaN(000-1): The missing link in bcc/hcp epitaxy, Editor's Suggestion
Phys. Rev. B 82, 125415 (2010)
[DOI:10.1103/PhysRevB.82.125415]
[BibTeX]
[PDF / © APS; download for personal use only]
Y. Takagaki, J. Lähnemann, B. Jenichen, J. Herfort, C. Herrmann and U. Jahn
Distribution of structural domains in MnAs layers grown on GaAs substrates
J. Appl. Phys. 108, 123510 (2010)
[DOI:10.1063/1.3520654] [BibTeX]
[PDF / © AIP; download for personal use only]
W. Bergbauer, M. Strassburg, C. Kölper, N. Linder, C. Roder, J. Lähnemann, A. Trampert, S. Fündling, S. F. Li, H.-H. Wehmann and A. Waag
Continuous-flux MOVPE growth of position-controlled N-face GaN nanorods and embedded InGaN quantum wells
Nanotechnology 21, 305201 (2010)
[DOI:10.1088/0957-4484/21/30/305201]
[BibTeX]
S. Fündling, Ü. Sökmen, A. Behrends, M. A. M. Al-Suleiman, S. Merzsch, S. Li, A. Bakin, H.-H. Wehmann, A. Waag, J. Lähnemann, U. Jahn, A. Trampert and H. Riechert
GaN and ZnO nanostructures
Phys. Status Solidi B 247, 2315 (2010)
[DOI:10.1002/pssb.201046062]
[BibTeX]
2009
N. Barreau, J. Lähnemann, F. Couzinié-Devy, L. Assmann, P. Bertoncini and J. Kessler
Impact of Cu-rich growth on the CuIn1-xGaxSe2 surface morphology and related solar cells behaviour
Sol. Energ. Mat. Sol. C. 93, 2013 (2009)
[DOI:10.1016/j.solmat.2009.08.004]
[BibTeX]
Book chapters
C. B. Lim, A. Ajay, J. Lähnemann, D. A. Browne and E. Monroy
III-nitride Nanostructures for Intersubband Optoelectronics
in III-Nitride Materials, Devices and Nano-Structures (Ed. Zhe Chuan Feng), 77-113, World Scientific (2017)
[DOI:10.1142/9781786343192_0003] [BibTeX]
C. B. Lim, A. Ajay, J. Lähnemann, D. A. Browne and E. Monroy
Intersubband Optoelectronics Using III-Nitride Semiconductors
in Handbook of GaN Semiconductor Materials and Devices (Series in Optics and Optoelectronics) (Eds. Wengang (Wayne) Bi, Haochung (Henry) Kuo, Peicheng Ku, Bo Shen), 615-644 Taylor & Francis (2017)
[DOI:10.1201/9781315152011] [BibTeX]
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